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| AO4459 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4459 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4459 is Pb-free (meets ROHS & Sony 259 specifications). AO4459L is a Green Product ordering option. AO4459 and AO4459L are electrically identical . Features VDS (V) = -30V (V GS = -10V) ID = -6.5A RDS(ON) < 46m (VGS = -10V) RDS(ON) < 72m (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG Maximum -30 20 -6.5 -5.3 -30 3.1 2 -55 to 150 Units V V A W C Symbol A A t 10s Steady-State Steady-State RJA RJL Typ 33 62 18 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4459 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-6.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-5A Forward Transconductance VDS=-5V, ID=-6.5A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.5 -30 38 53 58 11 -0.78 -1 -3.5 668 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 126 92 6 12.7 VGS=-10V, VDS=-15V, I D=-6.5A 6.4 2 4 7.7 VGS=-10V, VDS=-15V, RL=2.5, RGEN=3 IF=-6.5A, dI/dt=100A/s IF=-6.5A, dI/dt=100A/s 6.8 20 10 22 15 30 9 16 830 46 68 72 -1.85 Min -30 -1 -5 100 -2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0 Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4459 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 30 25 -ID (A) 20 15 VGS=-3.5V 10 2 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.6 VGS=-10V ID=-6.5A VGS=-4.5V ID=-5A 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -40C -4.5V -4V -ID(A) 6 125C -10V -8V -5V 10 VDS=-5V 8 4 25C 80 RDS(ON) (m) VGS=-4.5V 60 VGS=-10V 40 1.4 1.2 1.0 0.8 20 0 2 4 =-6.5A, dI/dt=100A/s IF6 8 10 0.6 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (m) -IS (A) 100 ID=-6.5A 1E+01 1E+00 1E-01 1E-02 125C 125C 80 1E-03 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 60 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25C -40C -40C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 40 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4459 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-6.5A 1200 1000 Ciss Capacitance (pF) 800 600 400 Coss 200 Crss 0 0 3 6 9 12 15 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics 8 -VGS (Volts) 6 4 2 0 100 40 TJ(Max)=150C TA=25C Power (W) -ID (Amps) 10 RDS(ON) limited 100s 30 1ms 1 TJ(Max)=150C TA=25C 0.1 0.1 1 10ms 100ms DC 1s 10s 20 10 IF=-6.5A, dI/dt=100A/s 10 100 -VDS (Volts) 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. |
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